supplier for MRFE6S9160HS in USAIf you are searching for a , it is important to verify the exact manufacturer part number, package, performance grade, and availability before purchasing. The MRFE6S9160HS is a specialized RF power transistor from the Freescale Semiconductor/NXP product family, designed for high-power RF amplification in the 865–960 MHz frequency range. NXP now lists the MRFE6S9160H family as archived and discontinued, which makes reliable sourcing particularly important for maintenance, repair, and legacy RF equipment.

What Is the MRFE6S9160HS?

MRFE6S9160HS880 MHz, 35 W average, 28 V single-carrier N-CDMA RF power MOSFETsThe is an N-channel enhancement-mode lateral RF power MOSFET intended primarily for wireless infrastructure applications. The corresponding NXP documentation identifies the MRFE6S9160HR3 and MRFE6S9160HSR3 versions as . They were designed for N-CDMA, GSM, and GSM EDGE base-station applications operating from approximately 865 to 960 MHz.

The device uses LDMOS technology and is designed for RF power amplification rather than ordinary low-frequency switching. According to the manufacturer documentation, the device can operate with a qualified maximum supply voltage of 32 V, while its absolute maximum drain-source voltage is 66 V and maximum gate-source voltage is 12 V. The operating junction temperature capability is specified up to 225°C.

NI-780S packageThe MRFE6S9160HS is supplied in the , a three-pin surface-mount RF power package. The package is designed to provide an appropriate combination of electrical performance, thermal management, and mechanical robustness for RF power amplifier applications.

Key Features and Electrical Characteristics

35 W average output power21 dB power gain31% drain efficiencyOne of the major advantages of the MRFE6S9160HS is its suitability for relatively demanding RF power amplification. Under the manufacturer's typical single-carrier N-CDMA test conditions at 880 MHz, 28 V supply voltage, and 1.2 A quiescent drain current, the device produces approximately , with approximately and .

The device is also characterized for multicarrier amplifier applications. Its RF performance is supported by series-equivalent large-signal impedance parameters, which can simplify matching-network and amplifier design when working with the device's intended frequency range.

10:1 VSWR at 32 VDC, 880 MHz, with 3 dB overdriveAnother important feature is enhanced ruggedness. The manufacturer specifies that the device is capable of handling a under the documented conditions. This characteristic is particularly valuable in RF power amplifier designs, where antenna mismatch or abnormal load conditions can expose the transistor to substantial electrical stress.

ESD protectionThe device also incorporates and is documented as RoHS compliant. These features can simplify integration into equipment designed around established RF manufacturing and compliance requirements.

MRFE6S9160HS Applications

RF power amplification for wireless base stationsThe primary application of the MRFE6S9160HS is . Its frequency range aligns closely with the 900 MHz cellular spectrum used by technologies such as GSM, GSM EDGE, and N-CDMA. In a typical base-station transmitter, an RF signal generated at a relatively low power level must be amplified before it is delivered to the antenna. The MRFE6S9160HS can serve as a power-amplifier transistor within that signal chain.

GSM base stationsFor , RF power transistors operating around 900 MHz are required to provide efficient amplification while maintaining acceptable signal quality. The MRFE6S9160HS family was specifically developed around this type of infrastructure application. Its relatively high gain helps reduce the amount of drive power required from preceding amplifier stages, while its power-handling capability allows it to contribute to the final RF output stage.

GSM EDGE systemsFor , linearity and spectral performance become particularly important because digitally modulated signals can generate unwanted spectral components when an amplifier is operated improperly. The MRFE6S9160HS was characterized for GSM and GSM EDGE applications, making it suitable for RF amplifier architectures where controlled gain, efficiency, and signal quality are important considerations.

N-CDMA infrastructureThe device is also relevant to . The manufacturer's reference performance uses an IS-95 CDMA waveform with a 1.2288 MHz channel bandwidth and specifies typical performance at 880 MHz. This makes the transistor particularly useful when repairing or maintaining older CDMA-era radio equipment whose original RF power stage was designed around the MRFE6S9160H family.

multicarrier RF amplifier equipmentAnother important application is . In a multicarrier system, several RF carriers may pass through the same amplifier chain. The amplifier therefore needs suitable linearity and impedance characteristics in addition to raw output power. The MRFE6S9160H documentation specifically identifies the device as suitable for multicarrier amplifier applications.

legacy communication equipment, RF test systems, industrial wireless equipment, transmitter modules, and specialized radio hardwareBeyond cellular infrastructure, engineers may encounter this type of RF power transistor in . In many such applications, the component is no longer being selected for a newly developed commercial product; instead, it may be required because an existing system was originally designed around this specific RF transistor.

Related RF Power Transistor Models

Several related NXP/Freescale RF power devices can be useful when evaluating the MRFE6S9160HS family.

MRFE6S9060N470–960 MHzThe is one example. It is a broadband RF power LDMOS transistor covering approximately , with a typical 14 W average output rating at 28 V under specified conditions. Unlike the narrower application focus of the MRFE6S9160H family, the MRFE6S9060N is intended for broadband commercial and industrial applications and can be used in large-signal common-source amplifier designs.

broadband RF amplifiers, industrial transmitters, communication equipment, and 28 V base-station equipmentThe broader frequency coverage of the MRFE6S9060N can be useful in . NXP documentation also provides example GSM and GSM EDGE performance characteristics, illustrating how RF power transistors in this family can be optimized for different combinations of bandwidth, output power, efficiency, and signal quality.

MRFE6S9045N, MRFE6S9046GN, and MRFE6S9125NAnother group of related components includes the . These devices belong to the same general RF power product ecosystem but have different power levels and application characteristics. NXP's RF product selector identifies multiple devices covering the 865–960 MHz region, allowing engineers to select different output-power levels according to system requirements.

MRF8S9100HSMRF8S9220HSFor higher-power applications, the and are additional RF power devices covering the approximately 920–960 MHz region. NXP's product information lists the MRF8S9100HS at 72 W CW and the MRF8S9220HS at 65 W average output, both using a 28 V class supply. These devices can therefore be relevant when a design requires more RF output power than the MRFE6S9160HS's typical 35 W average rating.

When considering one of these devices as a replacement, however, engineers should not assume direct interchangeability simply because the frequency ranges are similar. RF power transistors can differ substantially in pin configuration, package, impedance characteristics, bias requirements, gain, thermal behavior, and linearity. The original amplifier's matching network and bias circuit must be evaluated before selecting an alternative.

Package, Sourcing, and Replacement Considerations

MRFE6S9160HSR3MRFE6S9160HSR5The and ordering variants are commonly encountered when searching historical inventory. The R3 and R5 suffixes relate to packaging and production/reel configurations rather than representing a completely different RF transistor. NXP documentation identifies the HSR3 version in the NI-780S package, while current component listings also identify HSR5 as an NI-780S RF FET.

supplier for MRFE6S9160HS in USABecause the MRFE6S9160H family is archived by NXP, buyers looking for a should pay particular attention to authenticity, packaging condition, date codes, traceability, and whether the offered part is the exact HSR3/HSR5 variant required by the equipment.

For legacy wireless infrastructure and RF equipment, an exact original component can be preferable to an unverified substitute because the RF matching network may have been specifically optimized for the original transistor's large-signal impedance characteristics.

Utsource provides a sourcing channel for checking availability of hard-to-find and discontinued electronic components such as the MRFE6S9160HS. When requesting or comparing stock, buyers should specify the complete part number and package designation to reduce the possibility of receiving an incompatible variant.

Conclusion

MRFE6S9160HSThe is a specialized RF power LDMOS transistor developed for 865–960 MHz wireless infrastructure, particularly N-CDMA, GSM, GSM EDGE, and multicarrier amplifier applications. Its 28 V operating class, typical 35 W average output capability, approximately 21 dB power gain, integrated ESD protection, and enhanced VSWR ruggedness make it a significant component for RF power-amplifier designs of its generation.

legacy base-station maintenance, communication-equipment repair, RF amplifier refurbishment, industrial wireless systems, and other applications where maintaining the original RF architecture is importantToday, the component is especially relevant to . Related devices such as the MRFE6S9060N, MRFE6S9045N, MRFE6S9046GN, MRFE6S9125N, MRF8S9100HS, and MRF8S9220HS provide useful comparison points, but their electrical and RF characteristics should be carefully evaluated before substitution.

supplier for MRFE6S9160HS in USAFor organizations searching for a , verifying the complete part number, package, authenticity, and RF specifications is essential, particularly because the original NXP product family is now discontinued.

www.utsource.netMRFE6S9160HS

Supplier for MRFE6S9160HS in USA: RF Power MOSFET Features, Applications, and Related Models

If you are searching for a supplier for MRFE6S9160HS in USA, it is important to verify the exact manufacturer part number, package, performance grade